PART |
Description |
Maker |
HYS64T64020GDL-3.7-A HYS64T64020GDL-5-A HYS64T3200 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 2Bank; available 3Q/04 DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 2Bank; available 3Q/04 DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 3Q/04 DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 3Q/04
|
Infineon
|
K4T56043QFNBSP K4T56083QFNBSP K4T56083QF K4T56083Q |
256Mb F-die DDR2 SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
EBE25EC8AAFA EBE25EC8AAFA-4C-E EBE25EC8AAFA-5C-E E |
256MB Unbuffered DDR2 SDRAM DIMM
|
Elpida Memory
|
EBE25UC8AAFV-AE-E EBE25UC8AAFV-BE-E EBE25UC8AAFV-D |
256MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
|
Elpida Memory
|
MT48LC16M16A2TG-75ITD |
256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
MT48LC64M4A203 |
SYNCHRONOUS DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
K4T56083QF-GCD5 K4T56083QF-ZCD5 K4T56043QF-GCD5 K4 |
256Mb F-die DDR2 SDRAM OSC 3.3V SMT 7X5 CMOS 256Mb的的F - DDR2内存芯片
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HYB18T256161BF-20 HYB18T256161BF-25 HYB18T256161BF |
256-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
HYS72T512122HFN-3.7-A HYS72T512022HFN-3.7-A |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM 512M X 72 DDR DRAM MODULE, PDMA240
|
Qimonda AG
|
HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 256MB PC100 (2-2-2) 2-bank End-of-Life SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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